NYACOL® offers colloidal alumina, ceria, silica and zirconia for polishing applications. NYACOL® generally supplies the abrasive as a raw material for formulating slurries, but in some cases the dispersion can be used as supplied.
For the polishing of silicon wafers, NexSil 85-40 and 125-40 are recommended as the abrasive for stock polish slurries. NexSil 6000 is supplied with a rate accelerating additive for use in single pass or recycle applications.
For STI and ILD CMP processes, cerium oxide is used. NYACOL® Ce80/10 is being offered as an abrasive for high selectivity STI slurries.
For ILD slurries, NexSil 85K-40 is the preferred abrasive for the formulation of ILD slurries. NexSil 85K-40 provides competitive performance with other colloidal silicas or fumed silica based slurries. We can provide a ready to use slurry if required. Ce80/10 is a cerium oxide sol which can be used in place of silica for ILD slurries. The solids loading of cerium oxide is much lower than colloidal silica for the same removal rate.
CMP is a complicated area and the choice of abrasive depends on the film or films being polished and the requirements of the applications. Our colloidal silica acid sols are typically a good choice for starting the formulation of the slurry and we can assist with custom chemistry for your application.
Sapphire and silicon carbide are hard wafer/film materials which are surprisingly polished successfully with colloidal silica. NexSil 85-40 and 125-40 are good choices for sapphire wafer polishing. We can provide expected results for C-plane and A-plane sapphire. Silicon carbide requires special chemistry to be used with our 85-40 and 125-40 abrasives, please contact NYACOL® to discuss.
We also offer specialty abrasives for GaAs, germanium, InP and other compound semiconductors.